Breaking up is hard to do—especially after 40 years together. It’s even tougher when those 40 years were spent constantly side by side, fostering an upstart technology that has changed the world.
Pushing limits, a layer only 1.5
nanometers thick (15 angstroms, ) of
silicon dioxide (SiO2), which has a
dielectric constant of 4, separates the
silicon from the gate in this model of a
transistor.
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